On the method of photoluminescence spectral intensity ratio imaging of silicon bricks: Advances and limitations
On the method of photoluminescence spectral intensity ratio imaging of silicon bricks: Advances and limitations
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DOI：
10.1063/1.4752409
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发表时间：
2012-09-15
影响因子：
3.2
通讯作者：
Trupke, Thorsten
中科院分区：
文献类型：
--
作者：
Mitchell, Bernhard;Weber, Juergen W.;Trupke, Thorsten
光谱光致发光成像如果应用在硅砖或厚硅片上，就能够提供定量的体寿命和掺杂图像。对这一新方法的全面研究解决了以前报道的低寿命区域的伪影，并提供了对该技术的更完整的理解。光谱分辨光致发光测量表明，源于亚带隙缺陷的发光不会导致这些伪影。相反，我们发现光在硅CCD内部的传播是造成图像对比度失真的主要原因，并介绍了一种通过图像去卷积来测量和消除这种扩散的方法。或者，可以通过使用InGaAs相机来系统地减少图像模糊。文中还给出了模拟结果和实验结果，并进行了对比讨论。除了消除模糊效果外，我们还发现S在百亩以上的寿命具有更高的准确度，曝光时间明显较短，但暗噪声限制了曝光时间。(C)2012年美国物理研究所。[http://dx.doi.org/10.1063/1.4752409]
Spectral photoluminescence imaging is able to provide quantitative bulk lifetime and doping images if applied on silicon bricks or thick silicon wafers. A comprehensive study of this new method addresses previously reported artefacts in low lifetime regions and provides a more complete understanding of the technique. Spectrally resolved photoluminescence measurements show that luminescence originating from sub band gap defects does not cause those artefacts. Rather, we find that optical light spreading within the silicon CCD is responsible for most of the distortion in image contrast and introduce a method to measure and remove this spreading via image deconvolution. Alternatively, image blur can be reduced systematically by using an InGaAs camera. Results of modelling this alternative camera type and experiments are shown and discussed in comparison. In addition to eliminating the blur effects, we find a superior accuracy for lifetimes above 100 mu s with significantly shorter, but dark noise limited exposure times. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752409]