Structural and opto-electronic features of pulsed laser ablation grown Cu2ZnSnS4 films for photovoltaic applications
Structural and opto-electronic features of pulsed laser ablation grown Cu2ZnSnS4 films for photovoltaic applications
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DOI：
10.1016/j.jallcom.2015.10.214
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发表时间：
2016-02
影响因子：
6.2
通讯作者：
S. Kala;H. Kaur;A. Rastogi;V. Singh;T. D. Senguttuvan
中科院分区：
文献类型：
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作者：
S. Kala;H. Kaur;A. Rastogi;V. Singh;T. D. Senguttuvan
报道了脉冲激光沉积(PLD)CuZnSnS_4复合薄膜在最佳温度下的硫化合成Cu2ZnSnS_4薄膜。当在优化的沉积和硫化条件下制备时，这些薄膜在1.4-1.6 eV的范围内显示出锐利的光学吸收边。总的来说，处理后的薄膜是非化学计量比的，缺乏S，过量的锌。在50-300K温度范围内的电导率测量表明，跳跃输运在T<；80K时的激活能≤为20meV，室温电阻率从0.1MΩ-cm变化到2.7Me-cm。
We report synthesis of Cu2ZnSnS4thin films of kesterite structure by sulfurization of pulsed laser deposited (PLD) CuZnSn composite films at optimized temperature. These films show sharp optical absorption edge in the range of 1.4–1.6 eV, when prepared under optimized conditions of deposition and sulfurization. In general, the processed films are found to be non-stoichiometric with deficiency of S and excess of Zn. Electrical conductivity measurements in the temperature range 50–300 K reveal hopping transport with activation energies ≤20 meV at T < 80 K and a room temperature resistivity varying from 0.1 to 2.7 Ω-cm.