p-Cu2O/SiCxOy/n-SiC/n-Si memory diode having resistive nonvolatile memory and rectifying behaviors
p-Cu2O/SiCxOy/n-SiC/n-Si memory diode having resistive nonvolatile memory and rectifying behaviors
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DOI：
10.7567/apex.7.074203
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发表时间：
2014-06
影响因子：
2.3
通讯作者：
A. Yamashita;Yoshihiko Sato;T. Tsukamoto;Y. Suda
中科院分区：
文献类型：
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作者：
A. Yamashita;Yoshihiko Sato;T. Tsukamoto;Y. Suda
我们已经提出了一种具有p-Cu 2 O/SiCxOy/n-SiC/n-Si二极管结构的pn存储二极管，其中SiCxOy层形成在pn半导体层之间。该存储二极管具有连续非易失性存储和整流特性，适用于理论上密集的交叉点存储阵列。正向偏置电流在分别对应于低电阻状态和高电阻状态的高电流和低电流之间切换。实验结果表明，在状态的变化是有关的不存在或存在的负电荷所产生的电子捕获在中间SiCxOy氧化物层。该存储器还表现出超过105个电阻切换周期的良好耐久特性。
We have proposed a pn memory diode having a p-Cu2O/SiCxOy/n-SiC/n-Si diode structure with a SiCxOy layer formed between the pn semiconducting layers. The memory diode shows both resistive-nonvolatile-memory and rectifying behaviors, which are suited for the theoretically densest cross-point memory array. The forward bias current switches between high and low currents corresponding to low- and high-resistance states, respectively. Experimental results suggest that the change in the state is related to the nonexistence or existence of negative charges generated by electrons trapped in the intermediate SiCxOy oxide layer. This memory also exhibits good endurance characteristics of more than 105 resistance-switching cycles.