Electronic structure of multiwall boron nitride nanotubes
Electronic structure of multiwall boron nitride nanotubes
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DOI：
10.1103/physrevb.67.035429
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发表时间：
2003-01-15
影响因子：
3.7
通讯作者：
Fink, J
中科院分区：
文献类型：
--
作者：
Fuentes, GG;Borowiak-Palen, E;Fink, J
我们报告的电子能量损失谱研究的多壁氮化硼纳米管的电子性质，在B1 s和N1s的激发边缘和q依赖的能量损失函数。依赖于q的介电函数示出了π和sigma+ π等离子体激元的动量的强色散，表明它们在空间上沿着沿着管轴离域，如根据它们的特征二维类石墨结构所预期的，并且在11和12 eV处具有非色散激发。氮化硼纳米管的介电函数ε揭示了在5.4 eV处的强烈的π-π * 带间跃迁，当与最近的氮化硼纳米管的理论能带结构计算良好地一致时，与六方BN相比，该π-π * 带间跃迁向较低的能量移动了0.6 eV。
We report on electron energy-loss spectroscopy studies of the electronic properties of multiwall boron nitride nanotubes, in terms of the B1s and N1s excitation edges and of the q-dependent energy-loss function. The q-dependent dielectric function shows a strong dispersion in momentum of the pi and sigma+pi plasmons indicating that they are spatially delocalized along the tube axis as expected according to their characteristic two-dimensional graphiticlike structure, and nondispersing excitations at 11 and 12 eV. The dielectric function epsilon of the boron nitride nanotubes reveals an intense pi-pi* interband transition at 5.4 eV, which is shifted to lower energies by 0.6 eV when compared to hexagonal BN in good agreement with recent theoretical band-structure calculations of boron nitride nanotubes.