Large magnetoresistance (>600%) of a GaAs:MnAs granular thin film at room temperature
Large magnetoresistance (>600%) of a GaAs:MnAs granular thin film at room temperature
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DOI：
10.1063/1.2151817
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发表时间：
2006-04
影响因子：
3.2
通讯作者：
M. Yokoyama;T. Ogawa;A. M. Nazmul;Masaaki Tanaka
中科院分区：
文献类型：
--
作者：
M. Yokoyama;T. Ogawa;A. M. Nazmul;Masaaki Tanaka
A large positive magnetoresistance (MR) at room temperature was observed in a GaAs:MnAs granular thin film, in which MnAs nanoclusters were embedded in a GaAs matrix. Current-voltage characteristics and a MR effect of the GaAs:MnAs thin film were measured by a two-point-probe method. The MR ratio of the GaAs:MnAs granular thin film reached more than 600%, when a bias voltage of 110 V was applied to the film.
