An Ultralow Specific ON-Resistance LDMOST Using Charge Balance by Split p-Gate and n-Drift Regions
An Ultralow Specific ON-Resistance LDMOST Using Charge Balance by Split p-Gate and n-Drift Regions
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DOI：
10.1109/ted.2013.2283426
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发表时间：
2013-10
影响因子：
3.1
通讯作者：
Xinjiang Lyu;Xingbi Chen
中科院分区：
文献类型：
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作者：
Xinjiang Lyu;Xingbi Chen
研究了一种超低导通电阻的横向扩散金属氧化物半导体晶体管（LDMOST）。在关断状态下，分裂p型栅极被耗尽以实现与n型漂移区的电荷补偿，从而允许高n漂移掺杂。在导通状态下，由于所施加的栅极电压（VG）同时在n型漂移区中引起电子累积，因此空穴在分裂p栅极中累积，使得导通电流密度不受漂移掺杂浓度的限制，并导致Rsp的超低值。此外，所累积的空穴电荷在关断过程期间被存储在电容器中，并且在导通过程期间被恢复，而不增加有效栅极电荷（Qg）。仿真结果与理论分析吻合较好。600 V器件的Rsp <传统双RESURF LDMOST的50%，有效Qg几乎相同。
A laterally diffused metal-oxide-semiconductor transistor (LDMOST) with ultralow specific ON-resistance (Rsp) is studied. In the OFF-state, the split p-type gate is depleted to achieve charge compensation with the n-type drift region, allowing a high n-drift doping. In the ON-state, holes accumulate in the split p-gate because the gate voltage (VG) applied induces simultaneously electron accumulation in the n-type drift region, enabling the on-current density to be not limited by the drift doping concentration and resulting in an ultralow value of Rsp. Moreover, the accumulated hole charges are stored in a capacitor during the turn-off process and are restored during the turn-on process, without an increase of the effective gate charge (Qg). Simulation results show good agreement with the theory. A 600 V device has an Rsp of <;50% of the conventional double-RESURF LDMOST with the effective Qg being almost the same.