Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor
Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor
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DOI：
10.1063/1.1449530
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发表时间：
2002-02-18
影响因子：
4
通讯作者：
Petrou, A
中科院分区：
文献类型：
--
作者：
Hanbicki, AT;Jonker, BT;Petrou, A
我们报道了从铁磁金属接触到半导体发光二极管结构的电自旋注入，注入效率为30%，持续到室温。在Fe/AlGaAs界面处形成的肖特基势垒为反向偏压下的自旋极化电子的注入提供了天然的隧道势垒。这些载流子辐射复合，发射圆偏振光，并且与光学和载流子自旋偏振相关的量子选择规则提供了注入效率的定量的、与模型无关的测量。这表明，自旋注入接触可以使用广泛采用的接触方法形成，为自旋输运集成到半导体加工技术中提供了一个现成的途径。(C)2002年美国物理学会。
We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circularly polarized light, and the quantum selection rules relating the optical and carrier spin polarizations provide a quantitative, model-independent measure of injection efficiency. This demonstrates that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration of spin transport into semiconductor processing technology. (C) 2002 American Institute of Physics.