Laser-Fabricated Reduced Graphene Oxide Memristors
Laser-Fabricated Reduced Graphene Oxide Memristors
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DOI：
10.3390/nano9060897
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发表时间：
2019-06-01
期刊：
影响因子：
5.3
通讯作者：
Rodriguez, Noel
中科院分区：
文献类型：
--
作者：
Romero, Francisco J.;Toral-Lopez, Alejandro;Rodriguez, Noel
寻找一种廉价且可扩展的方法来大规模生产忆阻器将是其在最终用户计算应用中实现的关键方面之一。在此，我们报告了激光光刻氧化石墨烯忆阻器制造的开创性研究。该器件通过在聚对苯二甲酸乙二醇酯衬底上的氧化石墨烯涂层进行表面制造，然后进行局部激光辅助光热部分还原。在制作过程中适当调节激光能量密度，器件在电流-电压关系中呈现出一个特征的压缩闭环，显示出记忆磁滞的独特指纹。进行了结构和电学相结合的实验，对原材料和器件进行了表征，旨在建立优化路径。电学测量已经证明了电阻状态之间的明显区别，以及稳定的存储性能，这表明激光制造的氧化石墨烯忆阻器在电阻开关应用中的潜力。
Finding an inexpensive and scalable method for the mass production of memristors will be one of the key aspects for their implementation in end-user computing applications. Herein, we report pioneering research on the fabrication of laser-lithographed graphene oxide memristors. The devices have been surface-fabricated through a graphene oxide coating on a polyethylene terephthalate substrate followed by a localized laser-assisted photo-thermal partial reduction. When the laser fluence is appropriately tuned during the fabrication process, the devices present a characteristic pinched closed-loop in the current-voltage relation revealing the unique fingerprint of the memristive hysteresis. Combined structural and electrical experiments have been conducted to characterize the raw material and the devices that aim to establish a path for optimization. Electrical measurements have demonstrated a clear distinction between the resistive states, as well as stable memory performance, indicating the potential of laser-fabricated graphene oxide memristors in resistive switching applications.