Controlling In-Plane Magnetic Anisotropy of Co Films on MgO Substrates using Glancing Angle Deposition
Controlling In-Plane Magnetic Anisotropy of Co Films on MgO Substrates using Glancing Angle Deposition
复制标题
利用掠射角沉积控制 MgO 基底上 Co 薄膜的面内磁各向异性
DOI：
10.1002/pssa.202300010
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Frisk A
中科院分区：
文献类型：
--
作者：
Frisk A
控制薄膜面内磁各向异性的能力对于磁性器件应用非常重要。完成此任务的一种方法是掠射角沉积 (GLAD)。在此，使用 GLAD 磁控溅射在 MgO(001) 和 MgO(110) 基板上沉积了薄 Co 层。对于MgO(001)上的Co薄膜，面内各向异性方向可以通过沉积角度直接控制。相比之下，对于 MgO(110) 上的 Co，由于沉积角度引起的各向异性与基底引起的各向异性竞争，而生长参数决定了哪种贡献占主导地位。另一方面，虽然在 MgO(001) 上沉积角度和薄膜厚度会影响 Co 面内各向异性的强度，但对于 MgO(110) 上的薄膜，没有发现这些参数对磁性能的影响。
The ability to control the in‐plane magnetic anisotropy of a thin film is important for magnetic device applications. One way of accomplishing this task is by glancing angle deposition (GLAD). Herein, thin Co layers have been deposited using GLAD magnetron sputtering on MgO(001) and MgO(110) substrates. For Co films on MgO(001), the in‐plane anisotropy direction can be directly controlled via the deposition angle. In contrast, for Co on MgO(110), the anisotropy due to the deposition angle competes with the anisotropy induced by the substrate, while the growth parameters determine which contribution dominates. On the other hand, while on MgO(001) the deposition angle as well as the film thickness affect the strength of the Co in‐plane anisotropy, no influence of these parameters on the magnetic properties is found for films on MgO(110).