Photoresponse of the Schottky junction Au/SrTiO3:Nb in different resistive states
Photoresponse of the Schottky junction Au/SrTiO3:Nb in different resistive states
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DOI：
10.1063/1.2978240
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发表时间：
2008-09-08
影响因子：
4
通讯作者：
Shen, B. G.
中科院分区：
文献类型：
--
作者：
Shang, D. S.;Sun, J. R.;Shen, B. G.
本文对Au/SrTiO3: 0.05 wt %Nb的肖特基结的光电效应进行了系统的研究，该结的电阻可以通过施加电脉冲在近似于1和近似于200 M ω之间进行调谐。研究发现，当入射光的功率和波长一定时，尽管结电阻变化很大，但通过结的光电流是恒定的。根据光响应数据推导出的肖特基势垒与结电阻无关，约为1.5 eV。这一结果表明在电阻开关过程中界面势垒的不变性和丝状传导通道的存在。(C) 2008年美国物理研究所。
A systematic study on photovoltaic effects has been performed for the Schottky junction Au/SrTiO3 : 0.05 wt %Nb, the resistance of which can be tuned, by applied electric pulses, between similar to 1 and similar to 200 M Omega. It is found that, despite the great change in junction resistance, the photocurrent across the junction is constant when the power and wavelength of incident light are fixed. The corresponding Schottky barrier, deduced from the photoresponse data is similar to 1.5 eV, independent of junction resistance. This result suggests the invariance of the interfacial barrier during resistance switching and the occurrence of filamentary conduction channels. (C) 2008 American Institute of Physics.