Effect of Rb doping on ferroelectric and piezoelectric properties of Bi0.5Na0.5TiO3–BaTiO3 thin films
Effect of Rb doping on ferroelectric and piezoelectric properties of Bi0.5Na0.5TiO3–BaTiO3 thin films
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DOI：
10.1016/j.jallcom.2014.03.087
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发表时间：
2014-08
影响因子：
6.2
通讯作者：
S. Acharya;Byung-Guk Ahn;C. Jung;J. Koh;I. Choi;Sang‐Kwon Lee
中科院分区：
文献类型：
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作者：
S. Acharya;Byung-Guk Ahn;C. Jung;J. Koh;I. Choi;Sang‐Kwon Lee
采用金属有机物溶液沉积法在Pt/Ti/SiO2/Si衬底上制备了Rb掺杂0.94Bi 0.5Na 0.5TiO 3 - 0.06BaTiO 3（BNT-BT-Rbx）薄膜，Rb掺杂量为xmol %（x= 0，2.5，5，7.5，10）。实验研究了Rb掺杂对材料的相形成、微结构、漏电流以及铁电和压电性能的影响。结果表明，Rb掺杂可以显著提高BNT-BT薄膜的结构、形貌和电学性能。Rb掺杂量为5 mol%时，BNT-BT薄膜的介电常数、剩余极化率和有效压电常数分别为1.681、1.289 μC/cm 2和1.86 pm/V。有人建议，在5摩尔%的Rb BNT-BT薄膜的情况下，增强的电性能可以归因于由A位取代，大晶粒尺寸和晶格畸变引起的畴壁运动。
Rb doped 0.94Bi0.5Na0.5TiO3–0.06BaTiO3(BNT–BT–Rbx) thin films withxmol% Rb (x= 0, 2.5, 5, 7.5, 10) were deposited on Pt/Ti/SiO2/Si substrate by metal-organic solution deposition method. Experiments were conducted to investigate the effect of Rb doping on phase formation, microstructure, leakage current, and the resulting ferroelectric and piezoelectric property. It was found that substantial enhancement in structural, morphological and electrical properties can be achieved by Rb doping of BNT–BT thin films. Optimal electrical properties were obtained for 5 mol% Rb doped BNT–BT thin films, with a dielectric constant, remnant polarization, and effective piezoelectric constant of ∼681, ∼28.9 μC/cm2and ∼86 pm/V, respectively. It was suggested that the enhanced electrical properties in the case of 5 mol% Rb BNT–BT thin films can be attributed to domain wall movement induced byA-site substitutions, large grain size, and lattice distortion.