Dislocation Transport and Line Length Increase in Averaged Descriptions of Dislocations
Dislocation Transport and Line Length Increase in Averaged Descriptions of Dislocations
复制标题
位错传输和位错平均描述中的线长度增加
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
P. Gumbsch
中科院分区：
文献类型：
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作者：
T. Hochrainer;M. Zaiser;P. Gumbsch
晶体塑性是位错运动和相互作用的结果。然而，微观和介观模拟与连续晶体塑性模型之间仍然存在很大的差距。最近才定义了一个高维位错密度张量，它克服了早期位错密度度量的一些缺点。该张量的演化方程可以看作位错动力学的连续体。我们使用这个演化方程来建立总位错密度和平均曲率的演化方程，它们共同控制位错运动学的忠实表示，而无需使用额外的维度。
Crystal plasticity is the result of the motion and interaction of dislocations. There is, however, still a major gap between microscopic and mesoscopic simulations and continuum crystal plasticity models. Only recently a higher dimensional dislocation density tensor was defined which overcomes some drawbacks of earlier dislocation density measures. The evolution equation for this tensor can be considered as a continuum version of dislocation dynamics. We use this evolution equation to develop evolution equations for the total dislocation density and an average curvature which together govern a faithful representation of the dislocation kinematics without having to use extra dimensions.