Electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures
Electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures
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DOI：
10.1016/j.electacta.2004.11.066
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发表时间：
2005-05-20
影响因子：
6.6
通讯作者：
Sato, T
中科院分区：
文献类型：
--
作者：
Hasegawa, H;Sato, T
本文综述了作者小组最近的努力，利用电化学过程的形成，加工和栅极控制的III-V族半导体纳米结构。主题包括InP的精确的光阳极和脉冲阳极蚀刻，< 001 >通过阳极氧化在n型（001）InP中形成定向直纳米孔阵列及其可能的应用，以及通过脉冲原位电化学过程在GaAs，InP和GaN上形成宏观和纳米尺度的金属接触，这显著降低了费米能级钉扎。所有的结果表明，电化学过程可以实现独特的和重要的结果，这是传统的半导体技术无法实现的，预计其在未来的半导体纳米技术和纳米电子学的重要性增加。(c)2005爱思唯尔有限公司保留所有权利。
This paper reviews recent efforts by authors' group to utilize electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures. Topics include precise photo-anodic and pulsed anodic etching of InP, formation of arrays of < 001 >-oriented straight nanopores in n-type (001)InP by anodization and their possible applications and macroscopic and nanometer-scale metal contact formation on GaAs, InP and GaN by a pulsed in situ electrochemical process, which remarkably reduces Fermi level pinning. All the results indicate that electrochemical processes can achieve unique and important results, which the conventional semiconductor technology cannot realize, anticipating their increased importance in future semiconductor nanotechnology and nanoelectronics. (c) 2005 Elsevier Ltd. All rights reserved.