3D intrinsic Josephson junctions using c-axis thin films and single crystals
3D intrinsic Josephson junctions using c-axis thin films and single crystals
复制标题
使用 c 轴薄膜和单晶的 3D 本征约瑟夫森结
DOI：
10.1088/0953-2048/12/11/312
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发表时间：
1999
影响因子：
3.6
通讯作者：
T. Yamashita
中科院分区：
文献类型：
--
作者：
Sang‐Jae Kim;Y. Latyshev;T. Yamashita
我们报道了使用800 nm厚的c轴YBCO薄膜和Bi-2212单晶晶须成功地制备了3D本征约瑟夫森结（IJJ）。通过横向聚焦离子束蚀刻方法制备了IJJ的堆叠。宽度取决于所需的结的大小和膜厚度的全深度被图案化在一个微区域从正常方向蚀刻。通过将样品台倾斜至90°，根据所需的结尺寸从横向蚀刻桥的两个凹槽。当面内面积降至0.5 µm2时，结的临界电流密度（Jc）未出现任何退化。
We report successful fabrication of 3D intrinsic Josephson junctions (IJJs) using c-axis YBCO thin films of 800 nm thickness and Bi-2212 single-crystal whiskers. The stacks of IJJs were prepared by a lateral focused ion beam etching method. The width depending on the required junction size and the full depth of film thickness were patterned in a micro area from the normal direction etching. By tilting the sample stage up to 90°, two grooves of the bridge were etched from the lateral direction in accordance with the required junction size. The junctions did not show any degradation of critical current density (Jc) down to an in-plane area of 0.5 µm2.