Effects of post exposure bake temperature and exposure time on SU-8 nanopattern obtained by electron beam lithography
Effects of post exposure bake temperature and exposure time on SU-8 nanopattern obtained by electron beam lithography
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DOI：
10.7567/jjap.53.11rf03
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发表时间：
2014-11
影响因子：
1.5
通讯作者：
M. Yasui;Elito Kazawa;S. Kaneko;R. Takahashi;M. Kurouchi;T. Ozawa;M. Arai
中科院分区：
文献类型：
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作者：
M. Yasui;Elito Kazawa;S. Kaneko;R. Takahashi;M. Kurouchi;T. Ozawa;M. Arai
SU-8是使用UV射线成像的光致抗蚀剂。然而，我们研究了电子束光刻（EBL）获得的SU-8纳米图案的特性。特别是，我们研究了曝光后烘烤（PEB）温度和曝光时间之间的关系，SU-8纳米图案的相变温度为重点。SU-8残留物的形成通过增加PEB温度和暴露时间。为了防止这种情况的形成，进行了Monte Carlo模拟;这种模拟的结果表明，减小SU-8的厚度可以减少SU-8纳米图案的残留量。我们证实，减小SU-8的厚度也可以防止用EBL从SU-8纳米图案形成残留物。
SU-8 is a photoresist imaged using UV rays. However, we investigated the characteristics of an SU-8 nanopattern obtained by electron beam lithography (EBL). In particular, we studied the relationship between post-exposure bake (PEB) temperature and exposure time on an SU-8 nanopattern with a focus on phase transition temperature. SU-8 residue was formed by increasing both PEB temperature and exposure time. To prevent the formation of this, Monte Carlo simulation was performed; the results of such simulation showed that decreasing the thickness of SU-8 can reduce the amount of residue from the SU-8 nanopattern. We confirmed that decreasing the thickness of SU-8 can also prevent the formation of residue from the SU-8 nanopattern with EBL.