Temperature-stable operation of a quantum dot semiconductor disk laser
Temperature-stable operation of a quantum dot semiconductor disk laser
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量子点半导体盘激光器的温度稳定运行
DOI：
10.1063/1.2968137
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发表时间：
2008
影响因子：
4
通讯作者：
O. Okhotnikov
中科院分区：
文献类型：
--
作者：
T. Germann;A. Strittmatter;J. Pohl;U. W. Pohl;D. Bimberg;J. Rautiainen;M. Guina;O. Okhotnikov
我们展示了在stranski - krstanow体系中生长的基于量子点（QDs）的光泵浦半导体磁盘激光器（SDL）的温度无关输出特性。增益结构由一堆7×3量子点层组成，每个三层组位于光学反极位置。SDL的发射波长为1210nm，与泵的功率密度无关。阈值和差动效率不依赖于散热器温度。使用InGaAs量子点的基态跃迁实现了接近300mW输出功率的连续波工作。
We demonstrate temperature-independent output characteristics of an optically pumped semiconductor disk laser (SDL) based on quantum dots (QDs) grown in the Stranski-Krastanow regime. The gain structure consists of a stack of 7×3 QD layers, each threefold group being located at an optical antinode position. The SDL emits at 1210nm independent of the pump power density. Threshold and differential efficiency do not dependent on heat sink temperature. Continuous-wave operation close to 300mW output power is achieved using the ground-state transition of the InGaAs QDs.