Systematic row and zone axis STEM defect image simulations
Systematic row and zone axis STEM defect image simulations
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DOI：
10.1080/14786435.2010.547526
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发表时间：
2011-01-01
影响因子：
1.6
通讯作者：
De Graef, M.
中科院分区：
文献类型：
--
作者：
Phillips, P. J.;Mills, M. J.;De Graef, M.
透射电子显微镜（TEM）在晶体缺陷分析领域的发展中发挥了重要作用。传统的TEM成像技术，如明场（BF）、暗场（DF）和弱光束暗场（WBDF或g-3g）成像，已经在科学文献中得到了很好的记录，每种成像技术都有现成的模拟方法。目前的贡献强调了在扫描透射电子显微镜模式下操作的场发射透射电镜作为缺陷分析的可行工具的使用。双光束衍射对比、区轴成像等常用技术应用于缺陷分析；给出了实验和计算结果。本文还讨论了相机长度、光束发散角和衍射孔位置等实验参数的影响，并通过层错的实验和计算显微图进行了说明。
Transmission electron microscopy (TEM) has been instrumental in advancing the field of crystalline defect analysis. Conventional TEM imaging techniques, such as bright field (BF), dark field (DF), and weak beam dark field (WBDF or g-3g) imaging, have been well-documented in the scientific literature, with simulation methods readily available for each. The present contribution highlights the use of a field-emission TEM, operated in scanning transmission electron microscopy mode, as a viable tool for defect analysis. Common techniques such as two-beam diffraction contrast and zone axis imaging are applied to defect analysis; both experimental and computational results are presented. Effects of experimental parameters such as camera length, beam divergence angle, and diffraction aperture placement are also discussed and illustrated by both experimental and computed micrographs of stacking faults.