Ordered nanostructures written directly by laser interference

Ordered nanostructures written directly by laser interference
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DOI:
10.1088/0957-4484/20/12/125303
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发表时间:
2009-03
期刊:
影响因子:
3.5
通讯作者:
C. Tan;C. Peng;J. Pakarinen;M. Pessa;V. N. Petryakov;Yu. K. Verevkin;J. Zhang;Z. Wang;S. Olaizola;T. Berthou;S. Tisserand
C. Tan;C. Peng;J. Pakarinen;M. Pessa;V. N. Petryakov;Yu. K. Verevkin;J. Zhang;Z. Wang;S. Olaizola;T. Berthou;S. Tisserand
中科院分区:
材料科学3区
文献类型:
--
作者:
C. Tan;C. Peng;J. Pakarinen;M. Pessa;V. N. Petryakov;Yu. K. Verevkin;J. Zhang;Z. Wang;S. Olaizola;T. Berthou;S. Tisserand

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提出了一种简化的激光干涉光刻法制备有序纳米结构的方法。既不需要抵抗,也不需要复杂的制造过程。在这项工作中产生的四束干涉图案包括砷化镓中的周期性孔阵列,覆盖有SiO2气泡,并直接写入样品中。最小孔的直径小于30 nm。我们提出了一个模型来解释这些结果。
We present a simplified method to employ laser interference lithography for the fabrication of ordered nanostructures. Neither resist, nor an elaborate fabrication process was needed. Four-beam interference patterns generated in this work included periodic arrays of holes in GaAs, covered with SiO2 bubbles, and they were directly written into the sample. The diameters of the smallest holes were less than 30 nm. We propose a model to interpret the results.