P-Type Silicon Strip Sensors for the new CMS Tracker at HL-L-HC

P-Type Silicon Strip Sensors for the new CMS Tracker at HL-L-HC
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DOI:
10.1088/1748-0221/12/06/p06018
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发表时间:
2017-06-01
影响因子:
1.3
通讯作者:
Johns, W.
Johns, W.
中科院分区:
工程技术4区
文献类型:
--
作者:
Adam, W.;Bergauer, T.;Johns, W.

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LHC升级为高亮度LHC(HL-LHC),预计将使LHC的设计亮度提高一个数量级。这将需要具有显著更高的辐射硬度的硅跟踪探测器。CMS跟踪器协作组织已经进行了一次辐照和测量活动,以确定合适的硅传感器材料和条带设计,用于CMS实验中未来的外部跟踪器。基于这些结果,合作已经选择使用n-in-p型硅传感器,并将进一步的研究重点放在传感器类型的优化上。本文介绍了主要的测量结果和结论,促使这一决定。
The upgrade of the LHC to the High-Luminosity LHC (HL-LHC) is expected to increase the LHC design luminosity by an order of magnitude. This will require silicon tracking detectors with a significantly higher radiation hardness. The CMS Tracker Collaboration has conducted an irradiation and measurement campaign to identify suitable silicon sensor materials and strip designs for the future outer tracker at the CMS experiment. Based on these results, the collaboration has chosen to use n-in-p type silicon sensors and focus further investigations on the optimization of that sensor type.This paper describes the main measurement results and conclusions that motivated this decision.