The in‐plane magnetic anisotropy of RF‐sputtered FeNiN thin films
The in‐plane magnetic anisotropy of RF‐sputtered FeNiN thin films
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DOI：
10.1002/pssa.200723090
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发表时间：
2008-02
期刊：
影响因子：
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通讯作者：
Xuemei Wang;P. Wu;Xinjun Liu;Xiaofeng Chen;Zhi-Qing Li;H. Bai;E. Jiang
中科院分区：
文献类型：
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作者：
Xuemei Wang;P. Wu;Xinjun Liu;Xiaofeng Chen;Zhi-Qing Li;H. Bai;E. Jiang
采用射频磁控溅射技术，在室温下在Si（100）衬底上合成了FeNiN薄膜。系统地研究了氮浓度对其相结构和磁性能的影响。随着氮气分压（pn2）的增大，FeNiN薄膜在pn2≤5.0%时依次出现α‐Fe相，在pn2 = 25.0%时出现纯ε‐Fe3N相，在pn2 = 25.0%时出现ζ‐（Fe,Ni）2N相，但在整个pn2范围内均未出现γ′‐（Fe,Ni）4N相。这些不同相的薄膜表现出不同的磁性能，这可以归因于氮含量的强烈影响。在室温下，当pn = 3.0%时，获得了Ms为~ 1721 emu/cm3， HC <4 Oe的最佳软磁性能。特别是，我们通过实验发现氮原子在控制面内磁各向异性方面起着关键作用，而面内磁各向异性的演变是内应力、形状各向异性和诱导各向异性共同作用的结果。（©2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
FeNiN thin films were synthesized on Si(100) substrates at room temperature by RF magnetron sputtering. The nitrogen concentration dependence of their phase structure and magnetic properties was systematically investigated. With increasing nitrogen partial pressure (P N 2 ), the FeNiN thin films successively showed a α‐Fe phase at P N 2 ≤ 5.0%, then a pure ε‐Fe3N phase at P N 2 = 25.0%, and then a ζ‐(Fe,Ni)2N phase at P N 2 = 25.0%, but there was no γ′‐(Fe,Ni)4N phase in the whole P N 2 range. These films with various phases presented different magnetic properties, which can be ascribed to the strong effects of nitrogen content. The optimum soft magnetic properties with Ms of ∼1721 emu/cm3 and HC of <4 Oe were obtained at P N 2 = 3.0% at room temperature. In particular, we experimentally found that the nitrogen atoms play a key role in controlling the in‐plane magnetic anisotropy, and the evolution of the in‐plane anisotropy derives from the combined effects of internal stress, shape anisotropy, and induced anisotropy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)