Impact of Heavy-Ion Irradiation in an 80-V Radiation-Hardened Split-Gate Trench Power UMOSFET
Impact of Heavy-Ion Irradiation in an 80-V Radiation-Hardened Split-Gate Trench Power UMOSFET
复制标题
重离子辐射对 80V 抗辐射分栅沟槽功率 UMOSFET 的影响
DOI：
10.1109/ted.2021.3135369
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发表时间：
2022-02
影响因子：
3.1
通讯作者：
Cao Fei
中科院分区：
文献类型：
--
作者：
Yu Cheng-Hao;Wang Ying;Bao Meng-Tian;Li Xing-Ji;Yang Jian-Qun;Cao Fei
在这项工作中，单粒子烧毁（SEB）和重离子辐照引起的退化行为进行了研究，在80 V额定SEB硬化分裂栅沟槽（SGT）功率U形金属氧化物半导体场效应晶体管（UMOSFET）。在SEB硬化后，测得样品器件的SEB失效阈值电压为90 V;此外，当反向电压超过60 V时，发现辐照后漏漏或栅漏发生永久性退化。模拟结果表明，重离子引起的瞬态高温是导致严重退化和灾难性SEB的共同机制。此外，通过仿真验证了一种有效的方法来改善退化和SEB容限，从而提高器件的额定击穿电压。
In this work, the single-event burnout (SEB) and degradation behaviors induced by heavy-ion irradiation were investigated in an 80-V-rated SEB-hardened split-gate trench (SGT) power U-shaped metal-oxide-semiconductor field-effect transistor (UMOSFET). After SEB hardening, the SEB failure threshold voltage of the sample device was measured to be 90 V; furthermore, a permanent degradation of the drain leakage or gate leakage was found after irradiation when the reverse voltage exceeded 60 V. The simulation results demonstrate that the heavy-ion-induced transient high temperature is a common mechanism responsible for the severe degradation and the catastrophic SEB. In addition, an effective method to improve the degradation and SEB tolerances, which enhances the rated breakdown voltage of a device, was proven through simulations.