Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs
Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs
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DOI：
10.1063/1.4997328
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发表时间：
2017-05
影响因子：
4
通讯作者：
Yuewei Zhang;S. Krishnamoorthy;F. Akyol;Jared M. Johnson;A. Allerman;M. Moseley;A. Armstrong;Jinwoo Hwang;S. Rajan
中科院分区：
文献类型：
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作者：
Yuewei Zhang;S. Krishnamoorthy;F. Akyol;Jared M. Johnson;A. Allerman;M. Moseley;A. Armstrong;Jinwoo Hwang;S. Rajan
在这项工作中，我们研究了使用纳米级偏振工程来实现从金属到超宽带隙 AlGaN 的高效空穴注入，并且我们证明了紫外反射铝 (Al) 层可用于将空穴注入到 p-AlGaN 中。研究了隧道效应对金属功函数的依赖性，结果发现，尽管 Al 的功函数相对较低，但高反射 Al 金属层可以实现有效的空穴注入 p-AlGaN。通过 326 nm 的光发射证实了有效的隧道空穴注入，晶圆上峰值外量子效率和壁塞效率分别为 2.43% 和 1.33%。在 1200 A/cm2 下测得的高功率密度为 79.0 W/cm2。这里展示的金属/半导体隧道结结构可以为高功率紫外线发射器的高效且可制造的器件拓扑提供显着的优势。
In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide bandgap AlGaN, and we show that UV-reflective aluminum (Al) layers can be used for hole injection into p-AlGaN. The dependence of tunneling on the work function of the metal was investigated, and it was found that highly reflective Al metal layers can enable efficient hole injection into p-AlGaN, despite the relatively low work function of Al. Efficient tunneling hole injection was confirmed by light emission at 326 nm with an on-wafer peak external quantum efficiency and a wall-plug efficiency of 2.43% and 1.33%, respectively. A high power density of 79.0 W/cm2 was measured at 1200 A/cm2. The metal/semiconductor tunnel junction structure demonstrated here could provide significant advantages for efficient and manufacturable device topologies for high power UV emitters.