Discrete SnO2 Nanoparticle-Modified Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) for Efficient Perovskite Solar Cells
Discrete SnO2 Nanoparticle-Modified Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) for Efficient Perovskite Solar Cells
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用于高效钙钛矿太阳能电池的离散 SnO2 纳米颗粒改性聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）
DOI：
10.1002/solr.201900162
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发表时间：
2019
期刊：
影响因子：
7.9
通讯作者：
Yanbing Hou
中科院分区：
文献类型：
--
作者：
Pengcheng Jia;Wentao Bi;Xin Huang;Ling Li;Wenwen Gong;Yang Tang;Di Zhao;Yufeng Hu;Zhidong Lou;Feng Teng;Qiuhong Cui;Yanbing Hou
聚（3，4-亚乙基二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT：PSS）是具有p-i-n结构的钙钛矿太阳能电池（PVSC）中最广泛使用的空穴传输材料。然而，基于PEDOT：PSS的太阳能电池由于其上钙钛矿薄膜的结晶性差而显示出较低的光转换效率。此外，PEDOT：PSS性能的酸性严重影响PVSC的长期稳定性。本文中，在PEDOT：PSS的表面上沉积一层离散的SnO 2纳米颗粒膜以改性PEDOT：PSS膜的表面。这种离散的SnO 2纳米颗粒薄膜作为PEDOT：PSS和MAPbI 3之间的缓冲层，不仅提高了钙钛矿薄膜的结晶质量，而且还提供了选择性载流子路径，以增强空穴的提取并阻止电子的扩散。SnO 2修饰的器件的功率转换效率为18.04%，与仅PEDOT：PSS器件的12.24%的效率相比有很大的提高。本工作证明了通过n型纳米粒子修饰空穴传输层来提高PVSC的性能是可能的，并为PVSC界面改性工程提供了新的指导。
Poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is the most widely used hole transport materials for perovskite solar cells (PVSCs) with a p‐i‐n structure. However, the solar cells based on PEDOT:PSS show a low photoconversion efficiency due to the poor crystallinity of a perovskite film on it. Besides, the acidity of PEDOT:PSS performance critically influences the long‐term stability of PVSCs. Herein, a layer of the discrete SnO2nanoparticle film is deposited on the surface of PEDOT:PSS to modify the surface of the PEDOT:PSS film. This discrete SnO2nanoparticle film acts as the buffer layer between the PEDOT:PSS and MAPbI3, which not only improves the crystallization of the quality of the perovskite film, but also provides a selective‐carrier pathway to enhance the extraction of holes and to block the diffusion of electrons. The SnO2modified devices show a power conversion efficiency of 18.04%, with a great improvement compared with the 12.24% efficiency of PEDOT:PSS only devices. This work demonstrates that it is possible to enhance the performance of PVSCs via n‐type nanoparticle modification of hole transport layer and provides a new guidance for PVSCs interface modification engineering.