Remote modulation doping in van der Waals heterostructure transistors
Remote modulation doping in van der Waals heterostructure transistors
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DOI：
10.1038/s41928-021-00641-6
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发表时间：
2021-09-13
影响因子：
34.3
通讯作者：
Lee, Chul-Ho
中科院分区：
文献类型：
--
作者：
Lee, Donghun;Lee, Jea Jung;Lee, Chul-Ho
二硫化钼晶体管中的载流子可以通过远端掺杂和范德华异质结构的电荷转移来调制而不降低迁移率，从而避免了掺杂引起的杂质在沟道中的散射。掺杂是调制半导体的电学特性所必需的，但它引入的杂质会导致库仑散射，从而阻碍电荷的传输。这种散射在二维半导体中是一个特别的问题，因为带电的杂质离原子薄的沟道很近。本文报道了一种由带调制二硒化钨/六方氮化硼/二硫化钼异质结构组成的二维晶体管的远程调制掺杂。下面的二硫化钼通道通过控制电荷从二硒化钨表面的掺杂剂转移来远程掺杂。调制掺杂器件表现出二维受限电荷输运和杂质散射抑制，表现为随温度降低而增加迁移率。我们的二硫化钼调制掺杂场效应晶体管的室温迁移率为60 cm(2) V-1 s(-)(1)；相比之下，直接掺杂的晶体管的迁移率为35 cm(2) V-1 s(-)(1)。
Carriers in a molybdenum disulfide transistor can be modulated without decreasing mobility by remote doping and charge transfer through a van der Waals heterostructure, which avoids dopant-induced impurity scattering in the channel.Doping is required to modulate the electrical properties of semiconductors but introduces impurities that lead to Coulomb scattering, which hampers charge transport. Such scattering is a particular issue in two-dimensional semiconductors because charged impurities are in close proximity to the atomically thin channel. Here we report the remote modulation doping of a two-dimensional transistor that consists of a band-modulated tungsten diselenide/hexagonal boron nitride/molybdenum disulfide heterostructure. The underlying molybdenum disulfide channel is remotely doped via controlled charge transfer from dopants on the tungsten diselenide surface. The modulation-doped device exhibits two-dimensional-confined charge transport and the suppression of impurity scattering, shown by increasing mobility with decreasing temperature. Our molybdenum disulfide modulation-doped field-effect transistors exhibit a room-temperature mobility of 60 cm(2) V-1 s(-)(1); in comparison, transistors that have been directly doped exhibit a mobility of 35 cm(2) V-1 s(-)(1).