On the mobility of dislocations in silicon by in situ straining in a high-voltage electron microscope
On the mobility of dislocations in silicon by in situ straining in a high-voltage electron microscope
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通过高压电子显微镜中的原位应变研究硅中位错的迁移率
DOI：
10.1080/01418618108236157
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发表时间：
1981
影响因子：
1.6
通讯作者：
F. Louchet
中科院分区：
文献类型：
--
作者：
F. Louchet
本文用高压电子显微镜原位应变法研究了本征硅单晶在520 ~ 615°温度范围内的变形，并在70 ~ 370 MPa的剪切应力下进行了变形实验。观察到变形是通过圆盘形螺旋位错环的产生和滑移进行的。直接测量了螺旋和多边形环的60°直段的迁移率，并显示出与它们的长度无关，低至约0.4 μm。两种类型的位错的双扭结的成核的激活能估计。
Abstract Deformation of intrinsic silicon single crystals has been investigated by in situ straining in a high-voltage electron microscope, at temperatures ranging from 520 to 615° and resolved shear stresses between 70 and 370 MPa. Deformation was observed to proceed through generation and glide of polygonal-shaped spiral dislocation loops. The mobilities of the screw and 60° straight segments of polygonal loops were measured directly and shown to be independent of their lengths down to about 0.4 μm. The activation energies for nucleation of double kinks are estimated for both types of dislocations.