Electrochemistry of Gold Deposition on n‐Si(100)
Electrochemistry of Gold Deposition on n‐Si(100)
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DOI：
10.1149/1.1393507
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发表时间：
2000-06
影响因子：
3.9
通讯作者：
G. Oskam;P. Searson
中科院分区：
文献类型：
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作者：
G. Oskam;P. Searson
研究了KAu(CN)2溶液中金在n型硅上的电沉积金的成核和生长动力学。沉积是通过在广泛的电势和KAu(CN)2浓度范围内，通过三维半球形岛的渐进成核和扩散限制生长来进行的。结果表明，对于硅/金电极，当电位大于0V时，外加电位下降到硅/金界面上，而当电位大于0V时，外加电位下降到金/溶液界面处的亥姆霍兹层上。讨论了这些观测结果对金属-金属沉积成核模型对金属-金属沉积-半导体成核模型适用性的影响。
The electrochemical deposition of gold on n-type silicon from KAu(CN) 2 solutions was investigated by performing a detailed study of the nucleation and growth kinetics. Deposition occurs by progressive nucleation and diffusion-limited growth of three-dimensional hemispherical islands over a wide range of potentials and KAu(CN) 2 concentrations. It is shown that for a silicon/gold electrode, the applied potential is dropped over the silicon/gold interface at potentials more positive than 0 V, while at potentials more negative than 0 V, the applied potential is dropped over the Helmholtz layer at the gold/solution interface. The influence of these observations on the applicability of nucleation models derived for metal-on-metal deposition to metal deposition onto semiconductors is discussed.