Silylcarborane acrylate nanoimprint lithography resists.
Silylcarborane acrylate nanoimprint lithography resists.
复制标题
甲硅烷基碳硼烷丙烯酸酯纳米压印光刻抗蚀剂。
DOI：
10.1021/am9002292
复制
发表时间：
2009
影响因子：
9.5
通讯作者：
E. Coughlin
中科院分区：
文献类型：
--
作者：
Y. C. Simon;Isaac W. Moran;K. Carter;E. Coughlin
报道了一种新型硅基碳硼烷丙烯酸酯单体的合成及其作为抗蚀刻组分用于UV纳米压印光刻（NIL）压印层配方的应用。通过将10重量%的甲硅烷基碳硼烷丙烯酸酯单体引入到NIL抗蚀剂制剂中，所得膜的氧等离子体蚀刻速率降低了近2倍。当用于NIL中时，图案化的抗蚀剂层具有优异的氧等离子体蚀刻抗性，导致有效的图像转移到下面的聚（甲基丙烯酸羟乙酯）剥离层。后者允许通过NIL/剥离工艺制造金属叉指电极图案。这项工作证明了含硅基碳硼烷抗蚀剂的鲁棒性，并为研究新的高分辨率图案化方法铺平了道路。
The synthesis of a novel silylcarborane acrylate monomer is reported as well as its application as an etch-resistant component for the formulation of imprint layers for UV nanoimprint lithography (NIL). By introduction of 10% by weight of the silylcarborane acrylate monomer into NIL resist formulations, the oxygen plasma etch rate of the resulting film was reduced by nearly a factor of 2. When used in NIL, the patterned resist layer had excellent oxygen plasma etch resistance, leading to effective image transfer to the underlying poly(hydroxyethyl methacrylate) lift-off layer. The latter allowed for the fabrication of metallic interdigitated electrode patterns via a NIL/lift-off process. This work demonstrates the robustness of silylcarborane-containing resists and paves the way for the investigation of new, high-resolution patterning methods.