Magnetocapacitance and the edge state of a two-dimensional electron system in the quantum Hall regime.
Magnetocapacitance and the edge state of a two-dimensional electron system in the quantum Hall regime.
复制标题
量子霍尔体系中二维电子系统的磁电容和边缘态。
DOI：
10.1103/physrevlett.72.3080
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发表时间：
1994
影响因子：
8.6
通讯作者：
Nishi
中科院分区：
文献类型：
--
作者：
Takaoka;Oto;Kurimoto;Murase;Gamo;Nishi
通过二维电子系统 (2DES) 在量子霍尔体系中测量 GaAs/AlGaAs 异质结构的电容的磁场依赖性。结果发现，霍尔平台处的电容最小值不是由栅极下方的 2DES 面积决定的，而是由 2DES 的边缘长度决定的。这些结果无法用磁电容的现有解释来解释，其中电容与 2DES 的态密度直接相关。我们建议采用另一种模型，其中底部值基本上由边缘的载流面积确定。对当前通道的宽度进行了估计，并与最近的理论和实验估计进行了比较。
The magnetic field dependence of the capacitance of a GaAs/AlGaAs heterostructure through a two-dimensional electron system (2DES) is measured in the quantum Hall regime. It is found that the values of the capacitance minima at the Hall plateaus are determined not by the 2DES area under the gate but by the edge length of the 2DES. These results cannot be explained by an existing interpretation of the magnetocapacitance, where the capacitance is directly related to the density of states of the 2DES. We suggest an alternative model in which the bottom values are essentially determined by the current carrying area at the edge. The widths of the current channels are estimated and compared with the recent theoretical and experimental estimates.