Steep subthreshold swing of pentacene-based organic field-effect transistor with nitrogen-doped LaB6 interfacial layer
Steep subthreshold swing of pentacene-based organic field-effect transistor with nitrogen-doped LaB6 interfacial layer
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DOI：
10.7567/jjap.56.04cl06
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发表时间：
2017-03
影响因子：
1.5
通讯作者：
Y. Maeda;S. Ohmi
中科院分区：
文献类型：
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作者：
Y. Maeda;S. Ohmi
基于并五苯的有机场效应晶体管（OFET）需要在低工作电压和陡峭的亚阈值摆幅下工作。通过引入氮掺杂的LaB 6界面层（N-doped LaB 6 IL），并五苯基OFET的亚阈值摆幅得到了显著改善，但ID-VG特性中观察到了电荷注入型滞后。在这项研究中，N掺杂的LaB 6 IL的p型并五苯基OFET的厚度依赖性进行了研究。通过RF溅射在20-30 W的RF功率下在SiO2栅极绝缘体上沉积1.2-2.7 nm厚的N掺杂LaB 6 IL。结果表明，厚度为1.2nm的N掺杂LaB 6离子液体实现了75 mV/dec的陡峭亚阈值摆幅和0.26cm2/（V·s）的迁移率。
A pentacene-based organic field-effect transistor (OFET) is necessary to work at a low operation voltage and a steep subthreshold swing. The subthreshold swing of pentacene-based OFET was markedly improved by introducing a nitrogen-doped LaB6 interfacial layer (N-doped LaB6 IL) although charge-injection-type hysteresis was observed in ID–VG characteristics. In this study, the thickness dependence of N-doped LaB6 IL for p-type pentacene-based OFET was investigated. A 1.2–2.7-nm-thick N-doped LaB6 IL was deposited on an SiO2 gate insulator by RF sputtering at an RF power of 20–30 W. It was found that a 1.2-nm-thick N-doped LaB6 IL realized a steep subthreshold swing of 75 mV/dec with a mobility of 0.26 cm2/(V·s) for p-type pentacene-based OFET.