Direct photo-patternable, low-temperature processable polyimide gate insulator for pentacene thin-film transistors
Direct photo-patternable, low-temperature processable polyimide gate insulator for pentacene thin-film transistors
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DOI：
10.1016/j.orgel.2012.05.024
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发表时间：
2012-09-01
影响因子：
3.2
通讯作者：
Yi, Mi Hye
中科院分区：
文献类型：
--
作者：
Jang, Kwang-Suk;Suk, Hye Jung;Yi, Mi Hye
我们开发了光敏、可低温加工、可溶性聚酰亚胺 (PSPI) 栅极绝缘体，具有出色的耐光图案工艺性能。 PSPI是通过单体5-(2,5-二氧基四氢呋喃基)-3-甲基-3-环己烯-1,2-二甲酸酐(DOCDA)和3,5-肉桂酸二氨基苄酯(DABC)的一步缩聚合成的。 PSPI 薄膜在 160 摄氏度下制造，在 10 kHz 下的介电常数为 3.3，在 0 至 100 V 的偏置电压下，漏电流密度 < 1.7 x 10 (10) A/cm(2)。PSPI 可以通过选择性紫外光曝光和浸入 γ-丁内酯中轻松形成图案。为了研究聚酰亚胺作为可光图案化栅极绝缘体的潜力，我们制造了并五苯 OTFT 并确认了 PSPI 对光图案化工艺的耐受性。可光图案化的聚酰亚胺显示出作为 OTFT 栅极电介质的前景。 (C) 2012 Elsevier B.V. 保留所有权利。
We have developed photo-sensitive, low-temperature processable, soluble polyimide (PSPI) gate insulator with excellent resistance to the photo-patterning process. The PSPI was synthesized through one-step condensation polymerization of monomers 5-(2,5-dioxytetrahydrofuryl)- 3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride (DOCDA) and 3,5-diaminobenzyl cinnamate (DABC). PSPI thin film, fabricated at 160 degrees C, has a dielectric constant of 3.3 at 10 kHz, and leakage current density of < 1.7 x 10 (10) A/cm(2), while biased from 0 to 100 V. PSPI could be easily patterned by selective UV-light exposure and dipping into gamma-butyrolactone. To investigate the potential of the polyimide as the photo-patternable gate insulator, we fabricated pentacene OTFTs and confirmed the PSPI's resistance to the photo-patterning process. The photo-patternable polyimide shows promise as gate dielectrics for OTFTs. (C) 2012 Elsevier B.V. All rights reserved.