Design and performance analysis of GaN vertical JFETs with ion-implanted gates
Design and performance analysis of GaN vertical JFETs with ion-implanted gates
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具有离子注入栅极的 GaN 垂直 JFET 的设计和性能分析
DOI：
10.1088/1361-6641/ac9d00
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发表时间：
2022
影响因子：
1.9
通讯作者：
S. Pavlidis
中科院分区：
文献类型：
--
作者：
Shane Stein;D. Khachariya;S. Pavlidis
我们提出了一个全面的性能分析，垂直GaN JFET通过TCAD模拟与独特的考虑到Mg离子注入到GaN形成的栅极。首先评估了具有突变栅沟结的JFET的特定导通电阻和夹断电压对栅和沟道设计参数的依赖性。然后，栅极受主浓度和分布的影响进行了研究，以阐明不完全的受主激活或受主扩散的后果，从专门的注入后退火技术所必需的激活p-GaN。选择1.2 kV应用的1.7 kV击穿电压的常开和常关设计的例子进行激活和扩散研究，以演示夹断和导电特性如何受到不同沟道宽度和掺杂浓度的影响，有利于每种类型的操作。预计这两种器件的比导通电阻均低于1 mΩ cm 2，但栅极受主扩散会增加沟道电阻，尤其是设计为常关型的JFET。
We present a comprehensive performance analysis of vertical GaN JFETs via TCAD simulation with unique considerations for gates formed by Mg ion implantation into GaN. The dependence of the specific ON-resistance and pinch-off voltage on the gate and channel design parameters is first evaluated for a JFET with abrupt gate-channel junctions. Then, the influence of the gate acceptor concentration and distribution is studied to elucidate the consequences of incomplete acceptor activation or acceptor diffusion resulting from specialized post-implantation annealing techniques necessary for the activation of p-GaN. Examples of normally-ON and normally-OFF designs with 1.7 kV breakdown voltage for 1.2 kV applications are chosen for the activation and diffusion studies to demonstrate how the pinch-off and conduction characteristics are affected for different channel widths and doping concentrations conducive to each type of operation. Record low specific ON-resistance below 1 mΩ cm2 is predicted for both, but gate acceptor diffusion increases the channel resistance, especially for JFETs designed to be normally-OFF.
影响因子：
4
作者：
Breckenridge, M. Hayden;Tweedie, James;Sitar, Zlatko
通讯作者：
Sitar, Zlatko