S-parameter based device-level C-V measurement of p-i-n single-drift IMPATT diode for millimeter-wave applications
S-parameter based device-level C-V measurement of p-i-n single-drift IMPATT diode for millimeter-wave applications
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DOI：
10.1109/ieee-iws.2016.7585419
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发表时间：
2016-03
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通讯作者：
Wogong Zhang;M. Oehme;K. Kostecki;K. Matthies;V. Stefani;Ashraful I. Raju;D. Noll;V. S. Senthil Srinivasan;R. Korner;E. Kasper;J. Schulze
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文献类型：
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作者：
Wogong Zhang;M. Oehme;K. Kostecki;K. Matthies;V. Stefani;Ashraful I. Raju;D. Noll;V. S. Senthil Srinivasan;R. Korner;E. Kasper;J. Schulze
两种不同的电容-电压（C-V）测量方法被应用于制造的单漂移（SD）碰撞电离雪崩渡越时间（IMPATT）结构。根据C-V结果，计算了耗尽空间电荷区（SCR）宽度特性的载流子浓度。根据轻n掺杂层的外延厚度和掺杂浓度，将基于小信号S参数表征的方法应用于30 × 2 μm2的IMPATT器件（0.04 ~ 40 GHz），与使用常规低频（1 MHz）C-V仪器测量C-V结构（0.64 mm 2）的方法相比，显示出更好的一致性。此外，利用基于S参数的C-V测量得到的电容值，对30 × 2 μm2器件的E波段崩越渡越特性进行了模拟。在0.04-110 GHz的频率范围内，器件建模和测量之间的良好一致性表明了小信号S参数器件级C-V测量对于真实的毫米波应用场景的可靠性。
Two different approaches of capacitance-voltage (C-V) measurement were applied to the fabricated single-drift (SD) impact-ionization avalanche transit-time (IMPATT) structures. From both the C-V results, the carrier concentrations of depleted space-charge-region (SCR) width characteristics were calculated. According to the epitaxial thickness and the doping concentration of the lightly n-doped layer, the approach applied to a 30 × 2 μm2 IMPATT device, which is based on small-signal S-parameter characterization (0.04-40 GHz), showed better agreement compared with the approach applied to a C-V structure (0.64 mm2) using the conventional low frequency (1 MHz) C-V instrument. Additionally, the E-band IMPATT operation of the 30 × 2 μm2 device has been well modelled with the capacitance value extracted from the S-parameter based C-V measurement. The good agreement between device modelling and measurement within frequency range 0.04-110 GHz shows the reliability of the small-signal S-parameter device-level C-V measurement for real mm-wave application scenarios.