Interfacial reactions of ultrahigh‐vacuum‐deposited Cu thin films on atomically cleaned (111)Si. I. Phase formation and interface structure
Interfacial reactions of ultrahigh‐vacuum‐deposited Cu thin films on atomically cleaned (111)Si. I. Phase formation and interface structure
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DOI：
10.1063/1.354205
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发表时间：
1993-11
影响因子：
3.2
通讯作者：
C. Liu;Lun-Lun Chen-Lun
中科院分区：
文献类型：
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作者：
C. Liu;Lun-Lun Chen-Lun
用透射电子显微镜、X射线衍射仪和俄歇电子能谱研究了超高真空沉积的铜薄膜在原子清洁的(111)硅上的界面反应。界面化合物，CuSix，x=11.2-14at。%，观察到存在于铜/硅界面。在200℃、1h的样品中发现了η‘-Cu3Si相的存在，在200℃或更高的温度下，通过传输介质(铜或Cu3Si)在(111)Si上观察到了硅的固相外延生长，在200-800℃的样品中，唯一存在的择优取向的η’-Cu3Si相是η‘-Cu3Si和η’-Cu3Si的混合物。
Interfacial reactions of ultrahigh‐vacuum‐deposited Cu thin films on atomically cleaned (111)Si have been studied by transmission electron microscopy, x‐ray diffractometry, and Auger electron spectroscopy. An interface compound, CuSix with x=11.2–14 at. %, was observed to be present at the Cu/Si interface. η‘‐Cu3Si was found to form in samples annealed at 200 °C for 1 h. Solid‐phase‐epitaxial growth of silicon on (111)Si through a transport media (Cu or Cu3Si) was observed to occur at a temperature as low as 200 °C. Preferentially oriented η‘‐Cu3Si is the only phase present in samples annealed at 200–800 °C. In samples annealed at or higher than 850 °C, a mixture of η’‐Cu3Si and η‘‐Cu3Si was found to be present.