Impact of surfaces on the optical properties of GaAs nanowires
Impact of surfaces on the optical properties of GaAs nanowires
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DOI：
10.1063/1.3519980
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发表时间：
2010-11-15
影响因子：
4
通讯作者：
Fontcuberta i Morral, A.
中科院分区：
文献类型：
--
作者：
Demichel, O.;Heiss, M.;Fontcuberta i Morral, A.
表面上的GaAs纳米线的光学性质的影响是通过比较纳米线与或不与AlGaAs盖帽壳作为直径的函数。我们发现，未钝化的纳米线的光学性质是由费米能级钉扎，而钝化的纳米线的光学性质主要是由表面重组。最后，我们测量到的表面复合速度为3 × 10（3）cm·s（-1），比以前报道的（110）GaAs表面的值低一个数量级。这些结果将为纳米线在太阳能电池和发光器件中的应用提供指导。(C)2010年美国物理学会。[doi：10.1063/1.3519980]
The effect of surfaces on the optical properties of GaAs nanowires is evidenced by comparing nanowires with or without an AlGaAs capping shell as a function of the diameter. We find that the optical properties of unpassivated nanowires are governed by Fermi-level pinning, whereas, the optical properties of passivated nanowires are mainly governed by surface recombinations. Finally, we measure a surface recombination velocity of 3 x 10(3) cm s(-1) one order of magnitude lower than values previously reported for (110) GaAs surfaces. These results will serve as guidance for the application of nanowires in solar cell and light emitting devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3519980]