Improved on-state performance in AlGaN-channel heterojunction field-effect transistors with a quaternary AlGaInN barrier layer and a selectively grown n++-GaN contact layer
Improved on-state performance in AlGaN-channel heterojunction field-effect transistors with a quaternary AlGaInN barrier layer and a selectively grown n++-GaN contact layer
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DOI：
10.1016/j.mssp.2021.105960
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发表时间：
2021-10
影响因子：
4.1
通讯作者：
M. Miyoshi;Akiyoshi Inoue;M. Yamanaka;Hiroki Harada;T. Egawa
中科院分区：
文献类型：
--
作者：
M. Miyoshi;Akiyoshi Inoue;M. Yamanaka;Hiroki Harada;T. Egawa
采用自对准选区生长（SAG）技术制备了具有四元AlGaInN阻挡层和选择性再生长n++-GaN接触层的Al 0. 19 Ga 0. 81 N沟道金属-绝缘体-半导体异质结场效应晶体管（MIS-HFET）。自对准SAG工艺是通过局部区域刻蚀工艺和随后的金属有机化学气相沉积（MOCVD）高Si掺杂n++-GaN层的再填充工艺来实现的。结果表明，自对准SAG接触使欧姆接触电阻从10.5 Ωmm大幅降低到2.5 Ωmm。栅长1.5 μm、漏源长9.5 μm的MIS-HFET漏电流密度超过300 mA/mm，漏源电阻约为25 Ω mm。在栅漏长度为10 μm时，器件的关态击穿电压为1220 V，击穿场强为122 V/μm。
Al0.19Ga0.81N-channel metal-insulator-semiconductor heterojunction field-effect transistors (MIS-HFETs) with a quaternary AlGaInN barrier layer and a selectively regrown n++-GaN contact layer were fabricated using the self-alignment selective-area growth (SAG) technique. The self-alignment SAG process was accomplished by the local-area etching process and the subsequent refilling process with a highly-Si-doped n++-GaN layer by metalorganic chemical vapor deposition (MOCVD). It was confirmed that the ohmic contact resistance was drastically reduced from 10.5 Ωmm to 2.5 Ωmm via the self-alignment SAG contacts. Further, fabricated MIS-HFETs with a gate length of 1.5 μm and a drain-to-source length of 9.5 μm exhibited a high drain current density of over 300 mA/mm with a drain-to-source resistance of approximately 25 Ω mm. The fabricated devices also showed a high off-state breakdown voltage of 1220 V at a gate-to-drain length of 10 μm, corresponding to a breakdown field of 122 V/μm.