Vertical‐ and lateral‐type organic FET using pentacene evaporated films

Vertical‐ and lateral‐type organic FET using pentacene evaporated films
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DOI:
10.1002/eej.10500
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发表时间:
2004-11
影响因子:
0.4
通讯作者:
Satoshi Tanaka;Hirotomo Yanagisawa;M. Iizuka;M. Nakamura;K. Kudo
Satoshi Tanaka;Hirotomo Yanagisawa;M. Iizuka;M. Nakamura;K. Kudo
中科院分区:
工程技术4区
文献类型:
--
作者:
Satoshi Tanaka;Hirotomo Yanagisawa;M. Iizuka;M. Nakamura;K. Kudo

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有机半导体晶体管预期用于柔性显示器、信息标签等。然而,有机晶体管由于其高电阻率和低载流子迁移率而在电流密度和操作速度方面存在一些缺点。分析其运行机制,对于提高其绩效具有重要意义。我们比较了使用并五苯蒸发膜的横向和垂直型晶体管的特性。并五苯横向型FET特性由于制造参数如沉积速率、衬底温度和膜厚度而显示出大的变化。研究发现,蒸镀并五苯薄膜具有较大的晶粒间隙,这会干扰载流子沿着沟道形成的并五苯薄膜/SiO2界面方向的流动,使FET特性不稳定。假设并五苯膜不是合适的横向型晶体管。因此,我们已经使用并五苯蒸发膜制造了垂直型有机静电感应晶体管(SIT)。并五苯SIT在相对低的电压下显示出高速操作(截止频率为7.5kHz)。SIT结构的进一步优化将提高器件性能。© 2004 Wiley Periodicals,Inc. Electr Eng Jpn,149(2):43-48,2004;在线发表于Wiley InterScience(www.interscience.wiley.com)。DOI 10.1002/eej.10500
Organic semiconductor transistors are expected for flexible displays, information tags, and the like. However, organic transistors have some disadvantages of current density and speed of operation, because of their high resistivity and low carrier mobility. To improve their performance, it is valuable to analyze the mechanism of operation. We have compared characteristics of lateral‐ and vertical‐type transistors using pentacene evaporated films. The pentacene lateral‐type FET characteristics showed large variation due to fabrication parameters such as deposition rate, substrate temperature, and film thickness. It was found that evaporated pentacene thin films have large grain gaps, which disturb carrier flow along the channel formed pentacene film/SiO2 interface direction and make FET characteristics unstable. It is assumed that pentacene films are not suitable lateral‐type transistors. Accordingly, we have fabricated vertical‐type organic static induction transistors (SITs) using pentacene evaporated films. The pentacene SITs show high‐speed operation (cutoff frequency of 7.5 kHz) at relatively low voltages. Further optimization of SIT structure will improve the device performance. © 2004 Wiley Periodicals, Inc. Electr Eng Jpn, 149(2): 43–48, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.10500