Collision Strengths for Electron Collision Excitation of Fine-Structure Levels in S III
Collision Strengths for Electron Collision Excitation of Fine-Structure Levels in S III
复制标题
S III 精细结构能级电子碰撞激发的碰撞强度
DOI：
10.1086/307971
复制
发表时间：
1999
期刊：
影响因子：
--
通讯作者：
G. Gupta
中科院分区：
文献类型：
--
作者：
S. Tayal;G. Gupta
采用 R 矩阵方法计算了 3s23p2 3P0,1,2, 1D2 和 1S0 能级之间跃迁的电子碰撞激发强度，以及从这些能级到 S III 激发的 3s3p3、3s23p3d、3s23p4s、3s23p4p 和 3s23p4d 配置的精细结构能级跃迁的电子碰撞激发强度。我们考虑了 27 个 LS 3s23p2 3P, 1D, 1S, 3s3p3 5, 3So, 1, 3Do, 1, 3Po, 3s23p3d 1, 3Po, 1,3Do, 1, 3Fo, 3s23p4s 1,3Po, 3s23p4p 产生的 49 个精细结构水平1,3S、1,3P、1,3D、3s23p4d 1,3Po 和 1,3Do 状态。这些目标水平由相当广泛的配置相互作用波函数表示。通过将 LS 耦合 K 矩阵转换为中间耦合方案中的 K 矩阵，可以计算精细结构级别之间过渡的碰撞强度。收敛到激发态阈值的复杂共振结构明确包含在碰撞强度中。通过对麦克斯韦速度分布进行积分，从总碰撞强度中获得有效碰撞强度。这些是在较宽的电子温度范围 (0.5-10) × 104 K 内列出的。
Electron collisional excitation strengths for transitions between the 3s23p2 3P0,1,2, 1D2, and 1S0 levels and from these levels to the fine-structure levels of the excited 3s3p3, 3s23p3d, 3s23p4s, 3s23p4p, and 3s23p4d configurations of S III are calculated in R-matrix approach. We considered 49 fine-structure levels arising from the 27 LS 3s23p2 3P, 1D, 1S, 3s3p3 5, 3So, 1, 3Do, 1, 3Po, 3s23p3d 1, 3Po, 1,3Do, 1, 3Fo, 3s23p4s 1,3Po, 3s23p4p 1,3S, 1,3P, 1,3D, 3s23p4d 1,3Po, and 1,3Do states. These target levels are represented by fairly extensive configuration-interaction wave functions. The collision strengths for transitions between fine-structure levels are calculated by transforming the LS-coupled K-matrices to K-matrices in an intermediate coupling scheme. Complicated resonance structures converging to excited state thresholds are explicitly included in collision strengths. The effective collision strengths are obtained from the total collision strengths by integrating over a Maxwellian velocity distribution. These are tabulated over a wide electron temperature range (0.5-10) × 104 K.