INFRA-RED ABSORPTION IN SEMICONDUCTORS
INFRA-RED ABSORPTION IN SEMICONDUCTORS
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DOI：
10.1088/0034-4885/19/1/304
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发表时间：
1956-01-01
影响因子：
18.1
通讯作者：
FAN, HY
中科院分区：
文献类型：
--
作者：
FAN, HY
根据机理，半导体中的红外吸收分为四种不同的类型：(I)与电子激发有关的本征吸收；(Ii)由于自由载流子的存在而产生的吸收；(Iii)与杂质或晶格缺陷有关的吸收；以及(Iv)与晶格振动有关的吸收。在一般介绍之后是一些理论讨论。讨论了不同能带之间的电子激发，重点讨论了本征吸收边。对于自由载流子吸收，考虑了晶格振动和杂质中心对电子散射的影响。简要讨论了与局域电子态相关的吸收。讨论了四种不同半导体的实验结果：锗、硅、锑化铟和碲。对锗和硅的所有四种类型的吸收都进行了一定程度的研究。在这些材料上所做的工作为半导体的红外研究提供了一种模式。锑化铟的吸收边受载流子浓度的影响。长波长吸收显示出有趣的行为，而归因于晶格振动的观察到的效应提供了关于晶体中结合类型的信息。有光轴的碲是双折射的。吸收边和与自由载流子相关的吸收都取决于辐射的偏振方向。
Infra-red absorption in semiconductors is classified into four different types according to the mechanism:(i) intrinsic absorption associated with electron excitation across the energy gap;(ii) absorption due to the presence of free carriers;(iii) absorption associated with impurities or lattice defects; and (iv) absorption associated with lattice vibration. A general introduction is followed by some theoretical discussions. Electron excitation between different energy bands is discussed with emphasis on the intrinsic absorption edge. For the absorption by free carriers, the effects of electron scattering by lattice vibration and by impurity centres are considered. Absorption associated with localized electronic states is briefly discussed. Experimental results are discussed for four different semiconductors: germanium, silicon, indium antimonide, and tellurium. All four types of absorption have been investigated to some extent for germanium and silicon. The work done on these materials provides a pattern for infra-red studies on semiconductors. The absorption edge in indium antimonide is affected by the carrier concentration. Long wave-length absorption shows interesting behaviour, and the observed effects attributed to lattice vibration have provided information regarding the type of binding in the crystal. Tellurium, having an optical axis, is doubly refracting. Both the absorption edge and the absorption associated with free carriers depend on the direction of polarization of the radiation.