GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies
GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies
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DOI：
10.1038/nature09054
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发表时间：
2010-05-20
期刊：
影响因子：
64.8
通讯作者：
Rogers, John A.
中科院分区：
文献类型：
--
作者：
Yoon, Jongseung;Jo, Sungjin;Rogers, John A.
砷化镓（GaAs）等化合物半导体由于其直接带隙和高电子迁移率，在许多应用中比硅具有优势。实例范围从高效光伏器件（1,2）到射频电子学（3,4）和大多数形式的光电子学（5,6）。然而，生产这些材料的大而高质量的晶圆，并将它们紧密地集成在硅或非晶基板（如玻璃或塑料）上是昂贵的，这限制了它们的使用。在这里，我们描述了解决许多这些挑战的材料和制造概念，通过使用在厚的多层外延组件中生长的GaAs或AlGaAs薄膜，然后通过印刷相互分离并分布在外国衬底上。这种方法可以产生大量高质量的半导体材料，能够在大面积格式中集成器件，同时也允许晶圆被重复使用以进行额外的生长。我们通过三种不同的应用展示了这种方法的一些功能：基于砷化镓的金属半导体场效应晶体管和玻璃板上的逻辑门，硅片上的近红外成像器件，以及塑料片上的光伏模块。这些结果说明，在成本结构、格式、区域覆盖或使用模式与传统增长或集成策略不兼容的应用中，化合物半导体（如GaAs）的实现。
Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices(1,2) to radio-frequency electronics(3,4) and most forms of optoelectronics(5,6). However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.