Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory

Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory
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DOI：
10.1109/iedm.1998.746390
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发表时间：
1998-12
期刊：
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
影响因子：
--
通讯作者：
A. Seabaugh;X. Deng;B. Brar;T. Broekaert;R. Lake;F. Morris;G. Frazier
A. Seabaugh;X. Deng;B. Brar;T. Broekaert;R. Lake;F. Morris;G. Frazier
中科院分区：
其他
文献类型：
--
作者：
A. Seabaugh;X. Deng;B. Brar;T. Broekaert;R. Lake;F. Morris;G. Frazier

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集成的隧道二极管/晶体管工艺可用于提高信号处理电路的速度或以相同速度降低功耗;在存储器应用中，隧道二极管可用于相对于传统方法降低静态功耗（Si中> 20倍，III-V材料中> 1000倍）。本文综述了InP和Si基隧道二极管和电路的最新进展。
An integrated tunnel diode/transistor process can be used to increase the speed of signal processing circuitry or reduce power at the same speed; in memory applications, tunnel diodes can be used to reduce static power dissipation (>20X in Si, >1000X in III-V materials) relative to conventional approaches. This paper summarizes recent progress in InP and Si-based tunnel diodes and circuits.