Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers
Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers
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用于长波长半导体激光器的 InGaAsN:Sb/GaAs 量子阱的分子束外延生长
DOI：
10.1063/1.124311
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发表时间：
1999
影响因子：
4
通讯作者：
Wei Wang
中科院分区：
文献类型：
--
作者：
Xiaodong Yang;M. Jurkovic;J. Héroux;Wei Wang
采用氮气射频等离子体源，采用固体源分子束外延生长了InGaAsN：Sb/GaAs量子阱(QW)。光致发光研究表明，在生长过程中引入Sb助熔剂可以提高InGaAsN/GaAsGaAsQW的光学性质。X射线衍射和反射高能电子衍射分析表明，Sb起到了表面活性剂的作用。该技术被用于改善长波长InGaAsN激光二极管的性能。在室温脉冲工作条件下，InGaAsN：Sb/GaAs1.2μm单量子阱激光器获得了520A/cm2的低阈值电流密度。
InGaAsN:Sb/GaAs quantum wells (QWs) were grown by solid-source molecular beam epitaxy using a N2 radio-frequency plasma source. Photoluminescence reveals an enhancement in the optical properties of InGaAsN/GaAs QWs by the introduction of Sb flux during growth. X-ray diffraction and reflection high-energy electron diffraction analyses indicate that Sb acts as a surfactant. This technique was used to improve the performance of long-wavelength InGaAsN laser diodes. A low-threshold current density of 520 A/cm2 was achieved for an InGaAsN:Sb/GaAs single quantum well 1.2 μm laser diode at room temperature under pulsed operation.