Molecular dynamics simulation of silicon and silicon dioxide etching by energetic halogen beams
Molecular dynamics simulation of silicon and silicon dioxide etching by energetic halogen beams
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DOI：
10.1116/1.1385906
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发表时间：
2001-09-01
影响因子：
2.9
通讯作者：
Hamaguchi, S
中科院分区：
文献类型：
--
作者：
Ohta, H;Hamaguchi, S
分子。使用 Si-O-F 和 Si-O-Cl 系统的新原子间势组，对 50-150 eV 能量范围内的高能卤素（氟或氯）原子进行硅 (Si) 和二氧化硅 (SiO2) 蚀刻进行动力学模拟。将通过数值模拟获得的蚀刻速率和选择性与可用的实验数据进行比较。基于模拟结果，讨论了原子尺度的刻蚀机理，特别是氯和氟直接离子刻蚀特性的差异。 (C) 2001 年美国真空协会。
Molecular. dynamics simulations of silicon (Si) and silicon dioxide (SiO2) etching by energetic halogen (fluorine or chlorine) atoms in the energy range of 50-150 eV are performed using new sets of interatomic potentials for Si-O-F and Si-O-Cl systems. Etch rates and selectivities obtained from numerical simulations are compared with available experimental data. Etching mechanisms in the atomic scale, especially the difference between chlorine and fluorine direct ion etching characteristics, are discussed on the basis of the simulation results. (C) 2001 American Vacuum Society.