High-performance 1.3 µm InGaAs vertical cavity surface emitting lasers
High-performance 1.3 µm InGaAs vertical cavity surface emitting lasers
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高性能 1.3 µm InGaAs 垂直腔表面发射激光器
DOI：
10.1049/el:20030733
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发表时间：
2003
影响因子：
1.1
通讯作者：
J. Malmquist
中科院分区：
文献类型：
--
作者：
P. Sundgren;R. M. V. Würtemberg;J. Berggren;M. Hammar;M. Ghisoni;V. Oscarsson;E. Odling;J. Malmquist
报道了高性能InGaAs/GaAs双量子阱垂直腔面发射激光器（VCSELs），其发射波长可达1300 nm。由于大增益腔失谐，这些vcsel具有优异的温度性能，具有非常稳定的阈值电流和输出功率特性。对于1.27µm单模器件，阈值电流在10℃至90℃之间从2 mA降至1 mA，而峰值输出功率仅从1 mW降至0.6 mW。大面积1300nm vcsel显示出接近3mw的多模输出功率。
A report is presented on high-performance InGaAs/GaAs double quantum well vertical cavity surface emitting lasers (VCSELs) with record long emission wavelengths up to 1300 nm. Due to a large gain-cavity detuning these VCSELs show excellent temperature performance with very stable threshold current and output power characteristics. For 1.27 µm singlemode devices the threshold current is found to decrease from 2 to 1 mA between 10 and 90°C, while the peak output power only drops from 1 to 0.6 mW. Large-area 1300 nm VCSELs show multimode output power close to 3 mW.