Reduction of the interfacial Si displacement of ultrathin SiO2 on Si(100) formed by atmospheric-pressure ozone
Reduction of the interfacial Si displacement of ultrathin SiO2 on Si(100) formed by atmospheric-pressure ozone
复制标题
常压臭氧形成的Si(100)上超薄SiO2界面Si位移的降低
DOI：
10.1063/1.125798
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发表时间：
2000
影响因子：
4
通讯作者：
D. Moon
中科院分区：
文献类型：
--
作者：
A. Kurokawa;Ken Nakamura;S. Ichimura;D. Moon
我们使用中能离子散射光谱（MEIS）研究了SiO2和Si界面周围的结构，以研究在375 °C的衬底温度下，用大气压臭氧氧化Si（100）衬底形成的SiO2的界面Si位移。 与臭氧形成的氧化物具有相同厚度的热生长的氧化物也用MEIS测量用于比较。臭氧形成的氧化物在界面附近的氧化物层中表现出比热生长的氧化物少得多的Si位移，这表明臭氧氧化物是均匀的。这些结果很好地解释了我们以前的研究结果，即臭氧氧化物表现出恒定的HF蚀刻速率的二氧化硅，而热生长的氧化物减缓了界面附近的蚀刻速率。
We examined the structure around the interface of SiO2 and Si using medium-energy ion scattering spectroscopy (MEIS) to investigate the interfacial Si displacement of an ultrathin silicon dioxide formed by oxidation of a Si(100) substrate with atmospheric-pressure ozone at a substrate temperature of 375 °C. A thermally grown oxide with the same thickness as an ozone-formed oxide was also measured with MEIS for comparison. The ozone-formed oxide exhibited considerably less Si displacement in the oxide layers near the interface than a thermally grown oxide, which indicates that an ozone oxide is homogenous. These results explain well our previous findings that an ozone oxide exhibits a constant HF etching rate of silicon dioxide while a thermally grown oxide slows the etching rate near the interface.