Effect of interfacial specular electron reflection on the anisotropic magnetoresistance of magnetic thin films
Effect of interfacial specular electron reflection on the anisotropic magnetoresistance of magnetic thin films
复制标题
DOI：
10.1063/1.1310189
复制
发表时间：
2000-09
影响因子：
3.2
通讯作者：
B. Dieny;M. Li;S. Liao;C. Horng;K. Ju
中科院分区：
文献类型：
--
作者：
B. Dieny;M. Li;S. Liao;C. Horng;K. Ju
研究了镜面反射对磁性薄膜各向异性磁电阻效应的影响。通过使用Fuchs-Sondheimer理论的扩展，从微观输运参数计算了作为磁化和电流之间的角度的函数的片电导。该计算结合了镜面反射膜界面上的平均自由路径，这取决于局部磁化和电子速度之间的角度。理论结果与实验结果进行了比较。镜面反射可以解释在上一代AMR磁头中使用的NiFe薄膜中观察到的相当大的AMR幅度。
We investigated the effect of specular reflection on the anisotropic magnetoresistance (AMR) of magnetic thin films. The sheet conductance is calculated as a function of the angle between magnetization and current from the microscopic transport parameters by using an extension of the Fuchs–Sondheimer theory. The calculation combines specular reflection on the film interfaces with mean-free paths which depend on the angle between the local magnetization and the electron velocity. The theoretical results are compared with experimental ones. Specular reflection can explain the quite large AMR amplitude observed in thin NiFe films used in the last generation of AMR heads.