Monolithic Integration of GaN Nanowire Light-Emitting Diode With Field Effect Transistor
Monolithic Integration of GaN Nanowire Light-Emitting Diode With Field Effect Transistor
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DOI：
10.1109/led.2019.2895846
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发表时间：
2019-03-01
影响因子：
4.9
通讯作者：
Zhang, Jing
中科院分区：
文献类型：
--
作者：
Hartensveld, Matthew;Zhang, Jing
基于氮化镓（GaN）的发光二极管（LED）正在被研究用于下一代显示技术。然而，一直存在的问题是缺乏将晶体管与LED集成以进行控制的能力。在此，首次采用一种新颖的垂直集成方案制造出了带有纳米线场效应晶体管（FET）的纳米线LED。这种方法利用了对LED生长通用的无意掺杂的氮化镓模板层来制造纳米线FET。所展示的电压控制发光单元由于垂直集成而节省了面积、可实现缩放且更易于制造。对于这些初始的纳米线器件，在 -10V时实现了LED关闭的光调制。由于采用了纳米线方法，与其他集成方案相比，这些器件的开态电流与关态电流之比提高了两倍多。
Gallium nitride (GaN)-based light-emitting diodes (LEDs) are being investigated for the next generation display technology. The persistent issue, however, has been the lack of ability to integrate transistors with LEDs for control. Here, a novel vertical integration scheme is utilized to fabricatenanowireLEDswith nanowirefield effect transistors (FETs) for the first time. This approach utilizes the unintentionally doped GaN template layer which is common to LED growth for the fabrication of nanowire FETs. The demonstrated voltage-controlled light-emitting unit provides area savings, scaling, and easier fabrication due to the vertical integration. For these initial nanowire devices, light modulation is demonstrated with LED turn OFF at -10 V. Due to the nanowire approach, these devices show over two times improvement in the ION to I-OFF ratio compared with the alternative integration schemes.