Multiple avalanches across the metal-insulator transition of vanadium oxide nanoscaled junctions
Multiple avalanches across the metal-insulator transition of vanadium oxide nanoscaled junctions
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DOI：
10.1103/physrevlett.101.026404
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发表时间：
2008-07-11
影响因子：
8.6
通讯作者：
Schuller, Ivan K.
中科院分区：
文献类型：
--
作者：
Sharoni, Amos;Ramirez, Juan Gabriel;Schuller, Ivan K.
纳米级 VO(2) 器件的金属-绝缘体转变与通常报道的平滑传输曲线有很大不同。温度驱动的转变是通过一系列幅度超过 20 倍的电阻跳跃发生的，表明这种转变是由雪崩引起的。我们发现了跳跃尺寸的幂律分布，证明了 VO(2) 薄膜的固有属性。我们报告了跳跃幅度和器件尺寸之间令人惊讶的关系。渗滤模型捕获一般传输行为，但无法解释统计行为。
The metal-insulator transition of nanoscaled VO(2) devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in magnitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump sizes, demonstrating an inherent property of the VO(2) films. We report a surprising relation between jump magnitude and device size. A percolation model captures the general transport behavior, but cannot account for the statistical behavior.