Domain wall depinning from notches using combined in- and out-of-plane magnetic fields
Domain wall depinning from notches using combined in- and out-of-plane magnetic fields
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DOI：
10.1063/1.4944698
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发表时间：
2016-05-01
期刊：
影响因子：
1.6
通讯作者：
Gamm, Stephan Breitkreutz-V.
中科院分区：
文献类型：
--
作者：
Goertz, Jelle J. W.;Ziemys, Grazvydas;Gamm, Stephan Breitkreutz-V.
在具有垂直磁各向异性的纳米线中，可控的磁畴壁运动和钉扎在现代磁存储和逻辑器件中具有重要的意义。在这里，我们通过实验研究了在面内磁场和面外磁场的联合作用下，磁性纳米线中缺口处的DW钉扎和去钉扎。在我们的实验中，钴/铂纳米线的垂直磁化强度是在片上线圈产生的亚单位S面内场脉冲的帮助下倾斜的。从而降低了DW的能量密度，减小了缺口的脱钉扎场。应用了理论模型，并与测量结果进行了比较。通过微磁模拟进一步研究了DW脱钉机制和DW类型。(C)2016年作者(S)。除另有说明外，所有文章内容均按照知识共享署名3.0未移植许可进行许可。
Controlled domain wall motion and pinning in nanowires with perpendicular magnetic anisotropy are of great importance in modern magnetic memory and logic devices. Here, we investigate by experiment the DW pinning and depinning from a notch in a magnetic nanowire, under the influence of combined in-and out-of-plane magnetic fields. In our experiment, the perpendicular magnetization of the Co/Pt nanowires is tilted with the help of sub-mu s in-plane field pulses generated by an on-chip coil. Consequently, the energy density of the DW is decreased and the depinning field of the notch is reduced. A theoretical model is applied and compared to the measurement results. The DW depinning mechanism and the DW type are further investigated by micromagnetic simulations. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.