The effect of substrates on the Raman spectrum of graphene: Graphene-on-sapphire and graphene-on-glass
The effect of substrates on the Raman spectrum of graphene: Graphene-on-sapphire and graphene-on-glass
复制标题
DOI：
10.1063/1.2805024
复制
发表时间：
2007-11-12
影响因子：
4
通讯作者：
Balandin, Alexander A.
中科院分区：
文献类型：
--
作者：
Calizo, Irene;Bao, Wenzhong;Balandin, Alexander A.
作者研究了基材对石墨烯拉曼散射光谱的影响。将 GaAs、蓝宝石和玻璃基板上的石墨烯层的室温拉曼特征与作为参考的标准 Si/SiO2 (300 nm) 基板上的石墨烯的室温拉曼特征进行了比较。研究发现，Si/SiO2和GaAs上的石墨烯的G峰位于1580 cm(-1)处，而蓝宝石上的石墨烯则下移了大约5 cm(-1)，并且在某些情况下，玻璃上的石墨烯会分裂成双峰，中心频率约为1580 cm(-1)。所获得的结果对于石墨烯和石墨烯基器件的纳米计量学非常重要。 (c) 2007 年美国物理研究所。
The authors investigated the influence of substrates on Raman scattering spectrum from graphene. The room-temperature Raman signatures from graphene layers on GaAs, sapphire, and glass substrates were compared with those from graphene on the standard Si/SiO2 (300 nm) substrate, which served as a reference. It was found that while G peak of graphene on Si/SiO2 and GaAs is positioned at 1580 cm(-1), it is downshifted by similar to 5 cm(-1) for graphene on sapphire and, in some cases, splits into doublets for graphene on glass with the central frequency around 1580 cm(-1). The obtained results are important for nanometrology of graphene and graphene-based devices. (c) 2007 American Institute of Physics.