GRAZING-INCIDENCE X-RAY-FLUORESCENCE ANALYSIS
GRAZING-INCIDENCE X-RAY-FLUORESCENCE ANALYSIS
复制标题
DOI：
10.1016/0168-9002(86)90182-8
复制
发表时间：
1986-05-15
影响因子：
1.4
通讯作者：
GOHSHI, Y
中科院分区：
文献类型：
--
作者：
IIDA, A;SAKURAI, K;GOHSHI, Y
采用X射线外全反射法分析Si表面附近As原子的浓度分布。硅片被注入砷离子，然后在高温下退火。测量由单色同步加速器辐射激发的 As Kα 荧光信号的强度作为入射 X 射线掠射角的函数。非破坏性地分析了退火对浓度分布的影响。获得的结果与二次离子质谱深度分析的结果非常一致。该方法的检测限估计为 1013As 原子/cm2。
The X-ray external total reflection method was applied to the analysis of the concentration profile of As atoms near the Si surface. Si wafers were implanted with As ions and then annealed at a high temperature. The intensity of the As Kαfluorescence signal excited by monochromated synchrotron radiation was measured as a function of the glancing angle of the incident X-rays. The effect of annealing on the concentration profile was analyzed non-destructively. The results obtained are in good agreement with those using depth profiling by secondary ion mass spectrometry. The limit of detection by this method was estimated as 1013As atoms/cm2.